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| (R) T2535-600G HIGH PERFORMANCE TRIAC FEATURES HIGH COMMUTATION (dI/dt)c > 13 A/ms without snubber HIGH STATIC dV/dt > 500 V/s DESCRIPTION The T2535-600G triac uses a high performance SNUBBERLESSTM technology. The part is intended for general purpose applications using surface mount technology. A2 A2 A1 G D2PAK ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM Parameter Repetitive peak off-state voltage RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C) I t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current IG = 500 mA Tstg Tj Tl dIG /dt = 1 A/s. Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s 100 - 40, + 150 - 40, + 125 260 C C 2 Value Tj = 125C Tc= 95C tp = 8.3ms tp = 10 ms 600 25 262 250 312.5 20 Unit V A A It dI/dt 2 tp = 10 ms Repetitive F = 50 Hz A2s A/s May 1998 - Ed: 1E 1/5 T2535-600G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambiant (S=1cm2) Junction to case for DC Junction to case for AC 360conduction angle (F=50Hz) Value 45 1.4 1.0 Unit C/W C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant I-II-III MIN MAX VGT VGD IH * IL VTM * IDRM IRRM dV/dt * (dI/dt)c * VD=12V (DC) RL=33 VD=VDRM RL=3.3k IT= 500mA IG = 1.2 IGT ITM= 35A tp= 380s VD = VDRM VR = VRRM Linear slope up to VD=67%VDRM Gate open Without snubber Gate open Tj= 25C Tj= 125C Tj= 25C Tj = 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C I-II-III I-II-III I-II-III MAX MIN MAX MAX MAX MAX MAX MIN MIN Sensitivity 2 35 1.3 0.2 50 80 1.5 5 3 500 13 V V mA mA V A mA V/s A/ms Unit mA IGM = 4 A (tp = 20 s) * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment T 25 TRIAC CURRENT 35 - 600 SENSITIVITY G PACKAGE : G = D2PAK VOLTAGE 2/5 T2535-600G Fig. 1: Maximum power dissipation versus RMS on-state current . Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. P(W) 35 =180 =120 =90 =60 Rth=3C/W Rth=2C/W Rth=1C/W Rth=0C/W P(W) 35 30 25 20 15 10 5 0 0 5 10 15 20 25 =30 Tcase (C) 30 25 20 15 10 5 =180 95 100 105 110 115 120 IT(RMS)(A) 0 0 20 40 Tamb(C) 125 60 80 100 120 140 Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) 30 =180 K=[Zth/Rth] 1.00 Zth(j-c) 25 20 Zth(j-a) 15 10 5 0 0 25 Tcase( C) 50 75 100 125 0.10 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature (typical values). IGT,IH[Tj]/IGT,IH[Tj=25C] 2.5 2.0 1.5 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH IGT Fig. 6: Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 220 200 180 160 140 120 100 80 60 40 20 0 1 Tj initial=25 C F=50Hz Number of cycles 10 100 1000 3/5 T2535-600G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),I t(A s) 1000 Tj initial=25C ITSM Fig. 8: On-state characteristics(maximum values). ITM(A) 200 Tj max.: 100 Vto=0.9V Rt=16 m Tj=Tj max. 500 It 10 Tj=25C 200 tp(ms) 100 1 2 5 10 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 S(Cu) (cm ) 16 20 24 28 32 36 40 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T (C) 250 200 245C 215C 150 100 Epoxy FR4 board 50 0 Metal-backed board t (s) 0 40 80 120 160 200 240 280 320 360 4/5 T2535-600G PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.30 2.49 0.03 0.70 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 0.181 0.106 0.009 0.037 A C2 A1 A2 B B2 C D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R 1.25 1.40 0.048 0.055 0.45 0.60 0.017 0.024 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 0.016 8 0.054 0.368 0.405 0.208 0.624 0.055 0.069 C2 D E G L L2 L3 R V2 FOOT PRINT DIMENSIONS (in millimeters) 16.90 MARKING : T2535 600G 10.30 1.30 5.08 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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